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Realization of practical superconducting quantum computing requireslarge-scale integration of qubits with long coherence times. It has beenreported that {\alpha}-Ta (110) film can greatly improve the coherence times ofqubits. Compared to the commonly used {\alpha}-Ta (110) film deposited onc-plane sapphire, {\alpha}-Ta (110) film can be epitaxially grown on a-planesapphire because of the atomic relationships at their interface. Here, wedemonstrate the growth of a large-scale well-ordered quasi-single crystal{\alpha}-Ta (110) film with a low density of defects on a-plane sapphire. Theroot mean square of the film with thickness of 200 nm is below 0.7 nm over a 10{\mu}m \times 10 {\mu}m area and the residual resistance ratio is as high as15.5. Transmon qubits are also fabricated using this kind of film and showrelaxation times exceeding 150 {\mu}s. These results suggest {\alpha}-Ta (110)film grown on a-plane sapphire is an alternative promising choice forlarge-scale superconducting circuits with long coherence times of qubits.

Epitaxial {\alpha}-Ta (110) film on a-plane sapphire substrate for superconducting qubits with long coherence times