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Polycrystalline $\alpha$-tantalum (110) films deposited on c-plane sapphiresubstrate by sputtering are used in superconducting qubits nowadays. However,these films always occasionally form other structures, such as$\alpha$-tantalum (111) grains and $\beta$-tantalum grains, which are harmfulto large scale superconducting circuit fabrication. To improve the filmquality, we investigate the growth of $\alpha$-tantalum (110) films on a-planesapphire substrate under varying conditions by molecular beam epitaxytechnology. The optimized $\alpha$-tantalum (110) film is single crystal, witha smooth surface and atomically-flat metal-substrate interface.The film withthickness of 30 nm shows a Tc of 4.12K and a high residual resistance ratio of9.53. The quarter wavelength coplanar waveguide resonators fabricated with the150 nm optimized $\alpha$-tantalum (110) film, exhibits intrinsic qualityfactor of over one million under single photon excitation at millikelvintemperature.

$\alpha$-tantalum (110) films grown on a-plane sapphire substrate by  molecular beam epitaxy for low-loss superconducting coplanar waveguide  resonators