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Moir\'e superlattices formed by vertically stacking van der Waals layers hosta rich variety of correlated electronic phases and function as novel photonicmaterials. The moir\'e potential of the superlattice, however, is fixed by theinterlayer coupling of the stacked functional layers (e.g. graphene) anddependent on carrier types (e.g. electrons or holes) and valleys (e.g. {\Gamma}vs. K). In contrast, twisted hexagonal boron nitride (hBN) layers are predictedto impose a periodic electrostatic potential that may be used to engineer theproperties of an adjacent functional thin layer. Here, we show that thispotential is described by a simple theory of electric polarization originatingfrom the interfacial charge redistribution, validated by its dependence onsupercell sizes and distance from the twisted interfaces. We demonstrate thatthe potential depth and profile can be further controlled by assembling adouble moir\'e structure. When the twist angles are similar at the twointerfaces, the potential is deepened by adding the potential from the twotwisted interfaces, reaching ~ 400 meV. When the twist angles are dissimilar atthe two interfaces, multi-level polarization states are observed. As an exampleof controlling a functional layer, we demonstrate how the electrostaticpotential from a twisted hBN substrate impedes exciton diffusion in asemiconductor monolayer. These findings suggest exciting opportunities forengineering properties of an adjacent functional layer using the surfacepotential of a twisted hBN substrate.

Electrostatic moir\'e potential from twisted-hBN layers