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Diamond is generally considered to have high thermal conductivity, so littleattention has been paid to the laser heating effects at low excitation power.However, defects during the growth process can result in a great degradation ofthermal conductivity, especially at low temperatures. Here, we observed thedynamic redshift and broadening of zero phonon line (ZPL) of silicon-vacancy(SiV) centers in diamondin the experiment. Utilizing the intrinsic temperatureresponse of the fine structure spectra of SiV as a probe, we confirmed that thelaser heating effect appears and the temperature rising results from highdefect concentration. By simulating the thermal diffusion process, we haveestimated the thermal conductivity of around 1 W/(mK) at the local site, whichis a two order magnitude lower than that of single-crystal diamond. Our resultsprovide a feasible scheme for characterizing the laser heating effect ofdiamond at low temperatures.

Local laser heating effects in diamond probed by photoluminescence of SiV centers at low temperature