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We study the effect of the growth orientation on the structural, electronic,and hence transport properties of Sr$_2$CoNbO$_6$ thin films grown on theorthorhombic NGO(100) and cubic MgO(100) substrates. The x-ray diffractionpatterns show the growth of the thin film along $a$-axis resulting in theasymmetric ($b\neq c$) in-plane compressive strain in case of NGO(100), whereasalong $c$-axis with tensile strain in case of MgO(100) substrate. Thetemperature dependent resistivity measurements indicate the lower electronicconductivity for the film grown on the NGO(100) substrate, which is found to becorrelated with the higher degree of the oxygen deficiencies and hence largerconcentration of the insulating Co$^{2+}$ in this sample. Further, the x-rayphotoemission spectroscopy measurements show that Sr and Nb are present in the2+ and 4+ valence state, whereas Co exist in the 2+, 3+ as well as 4+ states,fraction of which was found to vary with the growth orientation. Moreover, theanalysis of leakage current using the sum exponent model indicate the presenceof two different relaxation mechanisms in these samples.

Effect of the growth orientation on the physical properties of Sr$_2$CoNbO$_6$ thin films