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The formation and dissolution of silver nanowires plays a fundamental role ina broad range of resistive switching devices, fundamentally relying on theelectrochemical metallization phenomenon. It was shown, however, that resistiveswitching may also appear in pure metallic nanowires lacking anysilver-ion-hosting embedding environment, but this pure atomic switchingmechanism fundamentally differs from the conventionalelectrochemical-metallization-based resistive switching. To facilitate thequantitative description of the former phenomenon, we investigate broad rangeof Ag atomic junctions with a special focus on the frequency-dependence and thefundamentally stochastic cycle-to-cycle variation of the switching thresholdvoltage. These devices are established in an ultra-high purity environmentwhere electrochemical metallization can be excluded. The measuredcharacteristics are successfully described by a vibrational pumping model,yielding consistent predictions for the weak frequency dependence and the largevariance of the switching threshold voltage. We also demonstrate thatelectrochemical-metallization-based resistive switching and pure atomicswitching may appear in the same device structure, and therefore the properunderstanding of the pure atomic switching mechanism has a distinguishedimportance in silver-based electrochemical metallization cells.

Voltage-time dilemma and stochastic threshold voltage variation in pure silver atomic switches