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Topological insulators (TI) and magnetic topological insulators (MTI) canapply highly efficient spin-orbit torque (SOT) and manipulate the magnetizationwith their unique topological surface states with ultra-high efficiency. Here,we demonstrate efficient SOT switching of a hard MTI, V-doped (Bi,Sb)2Te3(VBST) with a large coercive field that can prevent the influence of anexternal magnetic field. A giant switched anomalous Hall resistance of 9.2$k\Omega$ is realized, among the largest of all SOT systems. The SOT switchingcurrent density can be reduced to $2.8\times10^5 A/cm^2$. Moreover, as theFermi level is moved away from the Dirac point by both gate and compositiontuning, VBST exhibits a transition from edge-state-mediated tosurface-state-mediated transport, thus enhancing the SOT effective field to$1.56\pm 0.12 T/ (10^6 A/cm^2)$ and the interfacial charge-to-spin conversionefficiency to $3.9\pm 0.3 nm^{-1}$ (nominal spin Hall angle to $23.2\pm 1.8$).The findings establish VBST as an extraordinary candidate for energy-efficientmagnetic memory devices.

Giant Hall Switching by Surface-State-Mediated Spin-Orbit Torque in a Hard Ferromagnetic Topological Insulator