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Epitaxial growth has become a promising route to achieve highly crystallinecontinuous two-dimensional layers. However, high-quality layer production withexpected electrical properties is still challenging due to the defects inducedby the coalescence between imperfectly aligned domains. In order to controltheir intrinsic properties at the device scale, the synthesized materialsshould be described as a patchwork of coalesced domains. Here, we reportmulti-scale and multistructural analysis on highly oriented epitaxial WS$_2$and WSe$_2$ monolayers using scanning transmission electron microscopy (STEM)techniques. Characteristic domain junctions are first identified and classifiedbased on the detailed atomic structure analysis using aberration corrected STEMimaging. Mapping orientation, polar direction and phase at the micrometer scaleusing four-dimensional STEM enabled to access the density and the distributionof the specific domain junctions. Our results validate a readily applicableprocess for the study of highly oriented epitaxial transition metaldichalcogenides, providing an overview of synthesized materials from largescale down to atomic scale with multiple structural information.

Mapping domain junctions using 4D-STEM: toward controlled properties of epitaxially grown transition metal dichalcogenide monolayers