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Field-effect transistors based on molybdenum disulfide (MoS$_2$) exhibit ahysteresis in their transfer characteristics, which can be utilized to realize2D memory devices. This hysteresis has been attributed to charge trapping dueto adsorbates, or defects either in the MoS$_2$ lattice or in the underlyingsubstrate. We fabricated MoS$_2$ field-effect transistors on SiO$_2$/Sisubstrates, irradiated these devices with Xe$^{30+}$ ions at a kinetic energyof 180 keV to deliberately introduce defects and studied the resulting changesof their electrical and hysteretic properties. We find clear influences of theirradiation: While the charge carrier mobility decreases linearly withincreasing ion fluence (up to only 20% of its initial value) the conductivityactually increases again after an initial drop of around two orders ofmagnitude, likely due to the occurence of hopping transport via localizedstates. We also find a significantly reduced $n$-doping ($\approx$ 10$^{12}$per cm$^{2}$) and a well-developed hysteresis after the irradiation. Thehysteresis height increases with increasing ion fluence and enables us tocharacterize the irradiated MoS$_2$ field-effect transistor as a memory devicewith remarkably longer relaxation times ($\approx$ minutes) compared toprevious works.

Manipulation of the electrical and memory properties of MoS$_2$ field-effect transistors by highly charged ion irradiation