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Recent theoretical predictions and experimental demonstrations of a largetunneling magnetoresistance (TMR) effect in antiferromagnetic (AFM) tunneljunctions (AFMTJs) offer a new paradigm for information technologies where theAFM N\`eel vector serves as a state variable. A large TMR is beneficial for theapplications. Here, we predict the emergence of an extraordinary TMR (ETMR)effect in AFMTJs utilizing noncollinear AFM antiperovskite XNMn$_{3}$ (X = Ga,Sn,...) electrodes and a perovskite oxide ATiO$_{3}$ (A = Sr, Ba,...) barrierlayer. The ETMR effect stems from the perfectly spin-polarized electronicstates in the AFM antiperovskites that can efficiently tunnel through thelow-decay-rate evanescent states of the perovskite oxide while preserving theirspin state. Using an GaNMn$_{3}$/SrTiO$_{3}$/GaNMn$_{3}$ (001) AFMTJ as arepresentative example, we demonstrate a giant TMR ratio exceeding $10^{4}$%and originating from the ETMR effect. These results are promising for theefficient detection and control of the N\`eel vector in AFM spintronics.

Extraordinary Tunneling Magnetoresistance in Antiferromagnetic Tunnel Junctions with Antiperovskite Electrodes