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Stochastic p-Bit devices play a pivotal role in solving NP-hard problems,neural network computing, and hardware accelerators for algorithms such as thesimulated annealing. In this work, we focus on Stochastic p-Bits based onhigh-barrier magnetic tunnel junctions (HB-MTJs) with identical stack structureand cell geometry, but employing different spin-orbit torque (SOT) switchingschemes. We conducted a comparative study of their switching probability as afunction of pulse amplitude and width of the applied voltage. Throughexperimental and theoretical investigations, we have observed that the Y-typeSOT-MTJs exhibit the gentlest dependence of the switching probability on theexternal voltage. This characteristic indicates superior tunability inrandomness and enhanced robustness against external disturbances when Y-typeSOT-MTJs are employed as stochastic p-Bits. Furthermore, the random numbersgenerated by these Y-type SOT-MTJs, following XOR pretreatment, havesuccessfully passed the National Institute of Standards and Technology (NIST)SP800-22 test. This comprehensive study demonstrates the high performance andimmense potential of Y-type SOT-MTJs for the implementation of stochasticp-Bits.

Stochastic p-Bits Based on Spin-Orbit Torque Magnetic Tunnel Junctions