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A simple, reliable and field-free spin orbit torque (SOT)-inducedmagnetization switching is a key ingredient for the development of theelectrical controllable spintronic devices. Recently, the SOT induceddeterministic switching of the CoPt single layer has attracts a lot ofinterests, as it could simplifies the structure and add new flexibility in thedesign of SOT devices, compared with the Ferromagnet/Heavy metal bilayercounterparts. Unfortunately, under the field-free switching strategies usednowadays, the switching of the CoPt layer is often partial, which sets a majorobstacle for the practical applications. In this study, by growing the CoPt onvicinal substrates, we could achieve the full-scale (100% switching ratio)field-free switching of the CoPt layer. We demonstrate that when grown onvicinal substrates, the magnetic easy axis of the CoPt could be tilted from thenormal direction of the film plane; the strength of Dzyaloshinskii Moriyainteraction (DMI) would be also be tuned as well. Micromagnetic simulationfurther reveal that the field-free switching stems from tilted magneticanisotropy induced by the vicinal substrate, while the enhancement of DMI helpreducing the critical switching current. In addition, we also found that thevicinal substrates could also enhance the SOT efficiency. With such simplestructure, full-scale switching, tunable DMI and SOT efficiency, our resultsprovide a new knob for the design SOT-MRAM and future spintronic devices.

Full-scale field-free spin-orbit switching of the CoPt layer grown on vicinal substrates