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We present a novel analytical model for analysing the spectralphotoluminescence quantum yield of non-planar semiconductor thin films. Thismodel considers the escape probability of luminescence and is applied totriple-cation perovskite thin films with a 1-Sun photoluminescence quantumyield approaching 25%. By using our model, we can decouple the internalradiative, external radiative, and non-radiative bi-molecular recombinationcoefficients. Unlike other techniques that measure these coefficientsseparately, our proposed method circumvents experimental uncertainties byavoiding the need for multiple photoluminescence measurement techniques. Wevalidate our model by comparing the extracted implied open-circuit voltage,effective luminescence escape probabilities, absorptivity, and absorptioncoefficient with values obtained using established methods and found that ourresults are consistent with previous findings. Next, we compare the implied1-Sun radiative open-circuit voltage and radiative recombination currentobtained from our method with literature values. We then convert the impliedopen-circuit voltage and implied radiative open-circuit voltage to theinjection-dependent apparent-effective and apparent-radiative carrierlifetimes, which allow us to decouple the different recombination coefficients.Using this lifetime analysis, we predict the efficiency losses due to eachrecombination mechanism. Our proposed analytical model provides a reliablemethod for analysing the spectral photoluminescence quantum yield ofsemiconductor thin films, which will facilitate further research into thephotovoltaic properties of these materials.

Decoupling Bimolecular Recombination Mechanisms in Perovskite Thin Films Using Photoluminescence Quantum Yield