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We propose and analyze the performance of terahertz (THz) room-temperaturebolometric detectors based on the graphene channel field-effect transistors(GC-FET). These detectors comprise the gate barrier layer (BL) composed of thelateral hexagonal-Boron Nitride black-Phosphorus/ hexagonal-Boron Nitride(h-BN/b-P/h-BN) structure. The main part of the GC is encapsulated in h-BN,whereas a short section of the GC is sandwiched between the b-P gate BL and theh-BN bottom layer. The b-P gate BL serves as the window for the electronthermionic current from the GC. The electron mobility in the GC sectionencapsulated in h-BN can be fairly large. This might enable a strong resonantplasmonic response of the GC-FET detectors despite relatively lower electronmobility in the GC section covered by the b-P window BL. The narrow b-P windowdiminishes the Peltier cooling and enhances the detector performance. Theproposed device structure and its operation principle promote elevated valuesof the room-temperature GC-FET THz detector responsivity and othercharacteristics, especially at the plasmonic resonances.

Terahertz bolometric detectors based on graphene field-effect  transistors with the composite h-BN/black-P/h-BN gate layers using plasmonic  resonances