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Semiconductor spin qubits have gained increasing attention as a possibleplatform to host a fault-tolerant quantum computer. First demonstrations ofspin qubit arrays have been shown in a wide variety of semiconductor materials.The highest performance for spin qubit logic has been realized in silicon, butscaling silicon quantum dot arrays in two dimensions has proven to bechallenging. By taking advantage of high-quality heterostructures and carefullydesigned gate patterns, we are able to form a tunnel coupled 2 $\times$ 2quantum dot array in a $^{28}$Si/SiGe heterostructure. We are able to load asingle electron in all four quantum dots, thus reaching the (1,1,1,1) chargestate. Furthermore we characterise and control the tunnel coupling between allpairs of dots by measuring polarisation lines over a wide range of barrier gatevoltages. Tunnel couplings can be tuned from about $30~\rm \mu eV$ up toapproximately $400~\rm \mu eV$. These experiments provide a first step towardthe operation of spin qubits in $^{28}$Si/SiGe quantum dots in two dimensions.

A 2D quantum dot array in planar $^{28}$Si/SiGe