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The $\beta$-Ga$_2$O$_3$ has exceptional electronic properties with vastpotential in power and RF electronics. Despite the excellent demonstrations ofhigh-performance unipolar devices, the lack of p-type doping in$\beta$-Ga$_2$O$_3$ has hindered the development of Ga$_2$O$_3$-based bipolardevices. The approach of p-n diodes formed by polycrystalline p-type oxideswith n-type $\beta$-Ga$_2$O$_3$ can face severe challenges in further advancingthe $\beta$-Ga$_2$O$_3$ bipolar devices due to their unfavorable band alignmentand the poor p-type oxide crystal quality. In this work, we applied thesemiconductor grafting approach to fabricate monocrystallineSi/$\beta$-Ga$_2$O$_3$ p-n diodes for the first time. With enhancedconcentration of oxygen atoms at the interface of Si/$\beta$-Ga$_2$O$_3$,double side surface passivation was achieved for both Si and$\beta$-Ga$_2$O$_3$ with an interface Dit value of 1-3 x 1012 /cm2 eV. ASi/$\beta$-Ga$_2$O$_3$ p-n diode array with high fabrication yield wasdemonstrated along with a diode rectification of 1.3 x 107 at +/- 2 V, a diodeideality factor of 1.13 and avalanche reverse breakdown characteristics. Thediodes C-V shows frequency dispersion-free characteristics from 10 kHz to 2MHz. Our work has set the foundation toward future development of$\beta$-Ga$_2$O$_3$-based transistors.

Monocrystalline Si/$\beta$-Ga$_2$O$_3$ p-n heterojunction diodes fabricated via grafting