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The frequency dependence of negative differential conductance (NDC) is animportant property for the resonant-tunneling-diode terahertz source. Amongseveral phenomena determining the frequency dependence, this paper shows thatthe effect of potential change of the quantum well due to electron charge canbe analyzed with a simple and tractable model based on the tunneling admittanceand capacitance. The result is identical to that of Feiginov's analysis basedon more fundamental equations, showing a one-to-one correspondence between theparameters of the two analyses. Similar to Feiginov's analysis, our analysisalso shows that NDC remains finite even at infinitely high frequency. It isshown in our model that this result is attributed to neglecting the tunnelingtime at the emitter barrier. Comprehensive analysis of the frequency dependenceof NDC will be possible by incorporating the tunneling time into the presentmodel.

Simple model for frequency response of a resonant tunneling diode caused by potential change of quantum well due to electron charge