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Strong disorder has a crucial effect on the electronic structure in quantummaterials by increasing localization, interactions, and modifying the densityof states. Bi$_x$TeI films grown at room temperature and \SI{230}{K} exhibitdramatic magnetotransport effects due to disorder, localization and electroncorrelation effects, including a MIT at a composition that depends on growthtemperature. The increased disorder caused by growth at 230K causes theconductivity to decrease by several orders of magnitude, for severalcompositions of Bi$_x$TeI. The transition from metal to insulator withdecreasing composition $x$ is accompanied by a decrease in the dephasing lengthwhich leads to the disappearance of the weak-antilocalization effect.Electron-electron interactions cause low temperature conductivity correctionson the metallic side and Efros-Shklovskii (ES) variable range hopping on theinsulating side, effects which are absent in single crystalline Bi$_x$TeI. Theobservation of a tunable metal-insulator transition and the associated stronglocalization and quantum effects in Bi$_x$TeI shows the possibility of tuningspin transport in quantum materials via disorder.

Disorder-driven localization and electron interactions in Bi$_x$TeI thin films