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In this work we report a study and a co-design methodology of an analog SNNcrossbar output circuit designed in a 28nm FD-SOI technology node thatcomprises a tunable current attenuator and a leak-integrate and fire neuronsthat would enable the integration of emerging non-volatile memories (eNVMs) forsynaptic arrays based on various technologies including phase change (PCRAM),oxide-based (OxRAM), spin transfer and spin orbit torque magnetic memories(STT, SOT-MRAM). Circuit SPICE simulation results and eNVM experimental dataare used to showcase and estimate the neurons fan-in for each type of eNVMconsidering the technology constraints and design trade-offs that set itslimits such as membrane capacitance and supply voltage, etc.

A tunable and versatile 28nm FD-SOI crossbar output circuit for low power analog SNN inference with eNVM synapses