English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

Using Landau-Ginzburg-Devonshire (LGD) phenomenological approach we analyzethe bending-induced re-distribution of electric polarization and field, elasticstresses and strains inside ultrathin layers of van der Waals ferrielectrics.We consider a CuInP2S6 (CIPS) thin layer with fixed edges and suspended centralpart, the bending of which is induced by external forces. The unique aspect ofCIPS is the existence of two ferrielectric states, FI1 and FI2, correspondingto big and small polarization values, which arise due to the specific four-wellpotential of the eighth-order LGD functional. When the CIPS layer is flat, thesingle-domain FI1 state is stable in the central part of the layer, and the FI2states are stable near the fixed edges. With an increase of the layer bendingbelow the critical value, the sizes of the FI2 states near the fixed edgesdecreases, and the size of the FI1 region increases. When the bending exceedsthe critical value, the edge FI2 states disappear being substituted by the FI1state, but they appear abruptly near the inflection regions and expand as thebending increases. The bending-induced isostructural FI1-FI2 transition isspecific for the bended van der Waals ferrielectrics described by the eighth(or higher) order LGD functional with consideration of linear and nonlinearelectrostriction couplings. The isostructural transition, which is revealed inthe vicinity of room temperature, can significantly reduce the coercive voltageof ferroelectric polarization reversal in CIPS nanoflakes, allowing for thecurvature-engineering control of various flexible nanodevices.

Bending-induced isostructural transitions in ultrathin layers of van der Waals ferrielectrics