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Switching of magnetic tunnel junction using femto-second laser enables apossible path for THz frequency memory operation, which means writing speeds 2orders of magnitude faster than alternative electrical approaches based on spintransfer or spin orbit torque. In this work we demonstrate successfulfield-free 50fs single laser pulse driven magnetization reversal of [Tb/Co]based storage layer in a perpendicular magnetic tunnel junction. Thenanofabricated magnetic tunnel junction devices have an optimized bottomreference electrode and show Tunnel Magnetoresistance Ratio values (TMR) up to74\% after patterning down to sub-100nm lateral dimensions. Experiments oncontinuous films reveal peculiar reversal patterns of concentric rings withopposite magnetic directions, above certain threshold fluence. These rings havebeen correlated to patterned device switching probability as a function of theapplied laser fluence. Moreover, the magnetization reversal is independent onthe duration of the laser pulse. According to our macrospin model, theunderlying magnetization reversal mechanism can be attributed to an in-planereorientation of the magnetization due to a fast reduction of the out-of-planeuniaxial anisotropy. These aspects are of great interest both for the physicalunderstanding of the switching phenomenon and their consequences forall-optical-switching memory devices, since they allow for a large fluenceoperation window with high resilience to pulse length variability.

Field-free all-optical switching and electrical read-out of Tb/Co-based magnetic tunnel junctions