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Gate-defined quantum dots in silicon-germanium heterostructures have become acompelling platform for quantum computation and simulation. Thus far,developments have been limited to quantum dots defined in a single plane. Here,we propose to advance beyond planar systems by exploiting heterostructures withmultiple quantum wells. We demonstrate the operation of a gate-defined verticaldouble quantum dot in a strained germanium double quantum well. In quantumtransport measurements we observe stability diagrams corresponding to a doublequantum dot system. We analyze the capacitive coupling to the nearby gates andfind two quantum dots accumulated under the central plunger gate. We extractthe position and estimated size, from which we conclude that the double quantumdots are vertically stacked in the two quantum wells. We discuss challenges andopportunities and outline potential applications in quantum computing andquantum simulation.

A vertical gate-defined double quantum dot in a strained germanium double quantum well