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The investigation of chemical reactions during the ion irradiation is afrontier for the study of the ion-material interaction. In order to derive thecontribution of bond formation to chemistry of ion produced nanoclusters, thevalence electron energy loss spectroscopy (VEELS) was exploited to investigatethe Ga$^+$ ion damage in Al$_2$O$_3$, InP and InGaAs, where each targetmaterial has been shown to yield different process for altering the clusteringof recoil atoms: metallic Ga, metallic In and InGaP clusters in Al$_2$O$_3$,InP and InGaAs respectively. Supporting simulations based on Monte Carlo andcrystal orbital Hamiltonianindicate that the chemical constitution of cascadeinduced nano-precipitates is a result of a competition betweeninterstitial/vacancy consumption rate and preferential bond formation.

Preferential bond formation and interstitial/vacancy annihilation rate drive atomic clustering in gallium ion sputtered compound materials