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Defect centers in wide-band-gap crystals attracted considerable attention dueto the realisations of qubits, sensors, or single photon emitters at roomtemperature. The family of these centers is constantly growing, includingwell-known examples such as nitrogen-vacancy centers in diamond,silicon-vacancy in silicon carbide, chromium substitutions in aluminium oxide,and many others. Unfortunately, such defect centers embedded in highlyinsulating crystals have been notoriously difficult to excite electrically.Herewith, we present a realisation of insulating light-emitting diodes based oncarbon centers in hexagonal boron nitride. The rational design of the verticaltunnelling devices via van der Waals technology enabled us to control thecharge dynamics related to non-radiative tunelling, defect-to-bandelectroluminescence, and intradefect electroluminescence. The fundamentalunderstanding of the tunnelling events enabled us to achieve high efficiency ofelectrical excitation, which exceeded by a few orders of magnitude theefficiency of optical excitation in the sub-band-gap regime. A combination of aStark effect and screening by band electrons provide a control knob for tuningthe energy of emission. With this work, we solve an outstanding problem ofcreating electrically driven devices realised with defect centers inwide-band-gap crystals, which are relevant in the domain of optoelectronics,telecommunication, computation, or sensing.

Electrical excitation of carbon centers in hexagonal boron nitride with tuneable quantum efficiency