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The valley-related multiple topological phase transitions attractedsignificant attention due to their providing significant opportunities forfundamental research and practical applications. However, unfortunately, todate there is no real material that can realize valley-related multipletopological phase transitions. Here, through first-principles calculations andmodel analysis, we investigate the structural, magnetic, electronic, andtopological properties of VSiXN$_4$ (X = C, Si, Ge, Sn, Pb) monolayers.VSiXN$_4$ monolayers are stable and intrinsically ferrovalley materials.Intriguingly, we found that the built-in electric field and strain can inducevalley-related multiple topological phase transitions in the materials fromvalley semiconductor to valley-half-semimetal, to valley quantum anomalous Hallinsulator, to valley-half-semimetal, and to valley semiconductor (or tovalley-metal). The nature of topological phase transition is the built-inelectric field and strain induce band inversion between thed$_{xy}$/d$_{x2-y2}$ and d$_{z2}$ at obritals at K and K' valleys. Our findingsnot only reveal the mechanism of multiple topological phase transitions, butalso provides an ideal platform for the multi-field manipulating the spin,valley, and topological physics. It will open new perspectives for spintronic,valleytronic, and topological nanoelectronic applications based on thesematerials.

Built-in electric field and strain tunable valley-related multiple topological phase transitions in VSiXN$_4$ (X= C, Si, Ge, Sn, Pb) monolayers