English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

Topological semimetal materials have become a research hotspot due to theirintrinsic strong spin-orbit coupling which leads to large charge-to-spinconversion efficiency and novel transport behaviors. In this work, we haveobserved a bilinear magnetoelectric resistance (BMER) of up to 0.1 nm2A-1Oe-1in a singlelayer of sputtered semimetal Pt3Sn at room temperature. Differentfrom previous observations, the value of BMER in sputtered Pt3Sn does notchange out-of-plane due to the polycrystalline nature of Pt3Sn. The observationof BMER provides strong evidence of the existence of spin-momentum locking inthe sputtered polycrystalline Pt3Sn. By adding an adjacent CoFeB magneticlayer, the BMER value of this bilayer system is doubled compared to the singlePt3Sn layer. This work broadens the material system in BMER study, which pavesthe way for the characterization of topological states and applications forspin memory and logic devices.

Observation and enhancement of room temperature bilinear magnetoelectric resistance in sputtered topological semimetal Pt3Sn