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Atomic monolayers on semiconductor surfaces represent a new class offunctional quantum materials at the ultimate two-dimensional limit, rangingfrom superconductors [1, 2] to Mott insulators [3, 4] and ferroelectrics [5] toquantum spin Hall insulators (QSHI) [6, 7]. A case in point is the recentlydiscovered QSHI indenene [7, 8], a triangular monolayer of indium epitaxiallygrown on SiC(0001), exhibiting a $\sim$120meV gap and substrate-matchedmonodomain growth on the technologically relevant $\mu$m scale [9]. Itssuitability for room-temperature spintronics is countered, however, by theinstability of pristine indenene in air, which destroys the system along withits topological character, nullifying hopes of ex-situ processing and devicefabrication. Here we show how indenene intercalation into epitaxial grapheneoffers effective protection from the oxidizing environment, while it leaves thetopological character fully intact. This opens an unprecedented realm ofex-situ experimental opportunities, bringing this monolayer QSHI withinrealistic reach of actual device fabrication and edge channel transport.

Stabilizing an atomically thin quantum spin Hall insulator at ambient conditions: Graphene-intercalation of indenene