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The investigation of the properties of metal-semiconductor interfaces hasgained significant attention due to the unique features that emerge from thecombination of both metal and semiconductor attributes. In this report, themagnetic properties of Ni/Si interfaces utilizing X-ray magnetic circulardichroism (XMCD) spectroscopy at the Ni and Si edges have been studied. Thisapproach allows to distinguish unambiguously the local magnetism on Ni and Sivia individual core-level excitations. Two samples with different semiconductordopings were investigated using both total electron yield (TEY) andreflectivity configurations. The experimental results uncovered magnetizationat equilibrium in both the metallic layer and in the proximal layer of thesemiconductor substrate, implying the presence of induced spin polarization inSi at equilibrium, possibly arising from the depletion layer region. Theseresults hold significant value in the field of spintronics, as similar systemshave been demonstrated to generate spin injection through optical medium,opening a new pathway for next generation nonvolatile high speed devices.

Harnessing the magnetic proximity effect: induced spin polarization in Ni/Si interfaces