English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

Boron vacancies (VB${^-}$) in hexagonal boron-nitride (hBN) have sparkedgreat interest in recent years, due to their electronic spin properties. SincehBN can be readily integrated into devices where it interfaces a huge varietyof other 2D materials, boron vacancies may serve as a precise sensor which canbe deployed at very close proximity to many important materials systems. Boronvacancy defects may be produced by a number of existing methods, the use ofwhich may depend on the final application. Any method should reproduciblygenerate defects with controlled density and desired pattern. To date, however,detailed studies of such methods are missing. In this paper we study varioustechniques, focused ion beam (FIB), electron irradiation and ion implantation,for the preparation of hBN flakes from bulk crystals, and relevantpost-processing treatments to create VB${^-}$s as a function of flake thicknessand defect concentrations. We find that flake thickness plays an important rolewhen optimising implantation parameters, while careful sample cleaning provedimportant to achieve best results.

Exploring methods for creation of Boron-vacancies in hexagonal Boron Nitride exfoliated from bulk crystal