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We report interesting thermo-electric history effects associated with anelectric field-induced first order phase transition from Mott-insulator to themetallic state in the epitaxial thin film of V2O3. This phase transitionresults in tuneable resistive switching in V2O3. These findings are promisingfor novel technologies like optoelectronics and neuromorphic computing and maylead to highly energy-efficient switching applications of Mott insulators.

Thermo-electric history effects and resistive switching in epitaxial thin film of Mott insulator V2O3