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We characterized optically In0.37Ga0.63As/GaAs quantum dots andAl0.2Ga0.8As/Al0.9Ga0.1As distributed Bragg reflector based cavities. The mainmechanisms of quantum dots photoluminescence quenching were identified. Wemeasured reflectivity spectra of the cavity structure which allowed us toverify the proposed layer design and its fabrication by comparing them with theresults of simulations within the transfer matrix method.

Optical characteristics of cavity structures with  Al0.2Ga0.8As/Al0.9Ga0.1As distributed Bragg reflectors and In0.37Ga0.63As  quantum dots as the active region