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Ultrafast carrier and phonon dynamics at the buried heterointerface ofGaP/Si(001) are investigated by means of two-color pump-probe reflectivitymeasurements. The carrier-induced reflectivity signal exhibits a resonantenhancement at pump-photon energies of 1.4 eV, which can be assigned to anoptical transition between electronic interface states. The transientreflectivity is modulated by a coherent oscillation at 2 THz, whose amplitudealso becomes maximum at 1.4 eV. The observed resonant behavior of the phononmode in combination with a characteristic wavelength-dependence of, both, itsfrequency and initial phase, strongly indicate that the 2-THz mode is adifference-combination mode of a GaP-like and a Si-like phonon at theheterointerface and that this second-order scattering process can be enhancedby a double resonance involving the interfacial electronic states.

Strongly coupled interface electronic states and interface phonon mode at GaP/Si(001)