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Capping layers are essential for protecting phase change materials (PCMs)used in non-volatile photonics technologies. This work demonstrates how$(ZnS)_{0.8}-(SiO_2)_{0.2}$ caps radically influence the performance of$Sb_{2}S_{3}$ and Ag-doped $Sb_{2}S_{3}$ integrated photonic devices. We foundthat at least 30 nm of capping material is necessary to protect the materialfrom Sulfur loss. However, adding this cap affects the crystallizationtemperatures of the two PCMs in different ways. The crystallization temperatureof $Sb_{2}S_{3}$ and Ag-doped $Sb_{2}S_{3}$ increased and decreasedrespectively, which is attributed to interfacial energy differences. Capped anduncapped Ag-doped $Sb_{2}S_{3}$ microring resonator (MRR) devices werefabricated and measured to understand how the cap affects the deviceperformance. Surprisingly, the resonant frequency of the MRR exhibited a largerred-shift upon crystallization for the capped PCMs. This effect was due to thecap increasing the modal overlap with the PCM layer. Caps can, therefore, beused to provide a greater optical phase shift per unit length, thus reducingthe overall footprint of these programmable devices. Overall, we conclude thatcaps on PCMs are not just useful for stabilizing the PCM layer, but can also beused to tune the PCM crystallization temperature and reduce device footprint.Moreover, the capping layer can be exploited to enhance light-matterinteractions with the PCM element.

Capping Layer Effects on $Sb_{2}S_{3}$-based Reconfigurable Photonic Devices