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We report the effect of co-doping of In and Ga at low concentrations on thestructural, electronic, and thermoelectric properties of SnTe basedcompositions $Sn_{1.03-2x}In_{x}Ga_{x}Te$ (x = 0, 0.01, 0.02, 0.04) prepared bythe solid-state route and spark plasma sintering (SPS). All compositions formedin the fcc structure (Fm-3m) with no other impurity phase. The optical band gapincreased with the co-doping, indicative of band convergence effects. Firstprinciple electronic structure calculations showed band convergence and theformation of resonant levels, due to Ga and In doping respectively. The carrierconcentration increased on hole-doping by In and Ga ions while carrier mobilitydecreased due to impurity scattering. The resistivity increased withtemperature, indicative of the degenerate semiconducting character of thecompounds. The Seebeck coefficient of the doped samples increased linearly withtemperature, reaching 85 - 95 ${\mu}$V/K at 783 K. Thermal conductivitydecreased sharply with co-doping, and the lattice thermal conductivity droppedto 0.42 W$m^{-1}$ $K^{-1}$ above 750 K. The enhanced power factor and lowlattice thermal conductivity on doping resulted in a maximum figure of merit ZT= 0.34 at 773 K, twice that of the pristine SnTe.

Band degeneracy, resonant level formation and low thermal conductivity in dilute In and Ga co-doped thermoelectric compound SnTe