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On-chip integration of two-dimensional (2D) materials offers great potentialfor the realization of novel optoelectronic devices in different photonicplatforms. In particular, indium selenide (InSe) is a very promising 2Dmaterial due to its ultra-high carrier mobility and outstandingphoto-responsivity. Here, we report a high-speed photodetector based on amultilayer 90 nm thick InSe integrated on a silicon nitride (SiN) waveguide.The device exhibits a low dark current of 10 nA at 1V bias, a remarkablephotoresponsivity of 0.38 AW-1, and high external quantum efficiency of 48.4%measured at 5 V bias. This performance is tested at near-infrared (NIR) 976 nmwavelength under ambient conditions. Furthermore, using numerical andexperimental investigations, the estimated absorption coefficient per unitlength is 0.11dB/um. To determine the dynamic response of the photodetector,its small and large signal frequency response are also evaluated. A 3-dBradiofrequency (RF) bandwidth of 85 MHz is measured with an open-eye diagramobserved at 1 Gbit/s data transmission. Given these outstanding optoelectronicmerits, active photonic devices based on integrated multilayer InSe can berealized for a variety of applications including short-reach opticalinterconnects, LiDAR imaging, and biosensing.

A High-Speed Waveguide Integrated InSe Photodetector on SiN Photonics for NIR Applications