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Resistive random-access memory (RRAM) is a promising candidate fornext-generation memory devices due to its high speed, low power consumption,and excellent scalability. Metal oxides are commonly used as the oxide layer inRRAM devices due to their high dielectric constant and stability. However, tofurther improve the performance of RRAM devices, recent research has focused onintegrating artificial intelligence (AI). AI can be used to optimize theperformance of RRAM devices, while RRAM can also power AI as a hardwareaccelerator and in neuromorphic computing. This review paper provides anoverview of the combination of metal oxides-based RRAM and AI, highlightingrecent advances in these two directions. We discuss the use of AI to improvethe performance of RRAM devices and the use of RRAM to power AI. Additionally,we address key challenges in the field and provide insights into futureresearch directions

The Combination of Metal Oxides as Oxide Layers for RRAM and Artificial Intelligence