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Deoxyribonucleic acid (DNA) has emerged as a promising building block fornext-generation ultra-high density storage devices. Although DNA has highdurability and extremely high density in nature, its potential as the basis ofstorage devices is currently hindered by limitations such as expensive andcomplex fabrication processes and time-consuming read-write operations. In thisarticle, we propose the use of a DNA crossbar array architecture for anelectrically readable Read-Only Memory (DNA-ROM). While information can bewritten error-free to a DNA-ROM array using appropriate sequence encoding, itsread accuracy can be affected by several factors such as array size,interconnect resistance, and Fermi energy deviations from HOMO levels of DNAstrands employed in the crossbar. We study the impact of array size andinterconnect resistance on the bit error rate of a DNA-ROM array throughextensive Monte Carlo simulations. We have also analyzed the performance of ourproposed DNA crossbar array for an image storage application, as a function ofarray size and interconnect resistance. While we expect that future advances inbioengineering and materials science will address some of the fabricationchallenges associated with DNA crossbar arrays, we believe that thecomprehensive body of results we present in this paper establishes thetechnical viability of DNA crossbar arrays as low-power, high-density storagedevices. Finally, our analysis of array performance vis-a-vis interconnectresistance should provide valuable insights into aspects of the fabricationprocess such as the proper choice of interconnects necessary for ensuring highread accuracies.

Performance Analysis of DNA Crossbar Arrays for High-Density Memory Storage Applications