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High-speed Pockels modulation and second-order nonlinearities are keycomponents in optical systems, but CMOS-compatible platforms like silicon andsilicon nitride lack these capabilities. Micro-transfer printing of thin-filmlithium niobate offers a solution, but suspending large areas of thin films forlong interaction lengths and high-Q resonators is challenging, resulting in alow transfer yield. We present a new source preparation method that enablesreliable transfer printing of thin-film lithium niobate. We demonstrate itsversatility by successfully applying it to gallium phosphide and silicon, andprovide an estimate of the transfer yield by subsequently printing 25 lithiumniobate films without fail.

Reliable micro-transfer printing method for heterogeneous integration of lithium niobate and semiconductor thin films