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It is widely known that antiferromagnets (AFMs) display a high frequencyresponse in the terahertz (THz) range, which opens up the possibility forultrafast control of their magnetization for next generation data storage andprocessing applications. However, because the magnetization of the differentsublattices cancel, their state is notoriously difficult to read. One way toovercome this is to couple AFMs to ferromagnets - whose state is trivially readvia magneto-resistance sensors. Here we present conditions, using theoreticalmodelling, that it is possible to switch the magnetization of an AFM/FM bilayerusing THz frequency pulses with moderate field amplitude and short durations,achievable in experiments. Consistent switching is observed in the phasediagrams for an order of magnitude increase in the interface coupling and atripling in the thickness of the FM layer. We demonstrate a range of reversalpaths that arise due to the combination of precession in the materials and theTHz-induced fields. Our analysis demonstrates that the AFM drives the switchingand results in a much higher frequency dynamics in the FM due to the exchangecoupling at the interface. The switching is shown to be robust over a broadrange of temperatures relevant for device applications.

Simulations of Magnetization Reversal in FM/AFM Bilayers With THz Frequency Pulses