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Ferroelectricity in sputtered undoped-HfO$_2$ is attractive for compositioncontrol for low power and non-volatile memory and logic applications. Unlikedoped HfO$_2$, evolution of ferroelectricity with annealing and film thicknesseffect in sputter deposited undoped HfO$_2$ on Si is not yet reported. Inpresent study, we have demonstrated the impact of post metallization annealingtemperature and film thickness on ferroelectric properties in dopant-freesputtered HfO$_2$ on Si-substrate. A rich correlation of polarization withphase, lattice constant, and crystallite size and interface reaction isobserved. First, anneal temperature shows o-phase saturation beyond 600 oCfollowed by interface reaction beyond 700 oC to show an optimal temperaturewindow on 600-700 oC. Second, thickness study at the optimal temperature windowshows an alluring o-phase crystallite scaling with thickness till a criticalthickness of 20 nm indicating that the films are completely o-phase. However,the lattice constants (volume) are high in the 15-20 nm thickness range whichcorrelates with the enhanced value of 2Pr. Beyond 20 nm, crystallite scalingwith thickness saturates with the correlated appearance of m-phase andreduction in 2Pr. The optimal thickness-temperature window range of 15-20 nmfilms annealed at 600-700 oC show 2Pr of ~35.5 micro-C/cm$^2$ is comparable tostate-of-the-art. The robust wakeup-free endurance of ~$10^$8 cycles showcasedin the promising temperature-thickness window has been identifiedsystematically for non-volatile memory applications.

Evolution of ferroelectricity with annealing temperature and thickness in sputter deposited undoped HfO$_2$ on silicon