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Silicon carbide (SiC) is an important semiconductor material for fabricatingpower electronic devices that exhibit higher switch frequency, lower energyloss and substantial reduction both in size and weight in comparison with itsSi-based counterparts1-4. Currently, most devices, such asmetal-oxide-semiconductor field effect transistors, which are core devices usedin electric vehicles, photovoltaic industry and other applications, arefabricated on a hexagonal polytype 4H-SiC because of its commercialavailability5. Cubic silicon carbide (3C-SiC), the only cubic polytype, has amoderate band gap of 2.36 eV at room-temperature, but a superior mobility andthermal conduction than 4H-SiC4,6-11. Moreover, the much lower concentration ofinterfacial traps between insulating oxide gate and 3C-SiC helps fabricatereliable and long-life devices7-10,12-14. The growth of 3C-SiC crystals,however, has remained a challenge up to now despite of decades-long efforts byresearchers because of its easy transformation into other polytypes duringgrowth15-19, limiting the 3C-SiC based devices. Here, we report that 3C-SiC canbe made thermodynamically favored from nucleation to growth on a 4H-SiCsubstrate by top-seeded solution growth technique(TSSG), beyond what's expectedby classic nucleation theory. This enables the steady growth of quality andlarge sized 3C-SiC crystals (2~4-inch in diameter and 4.0~10.0 mm in thickness)sustainable. Our findings broaden the mechanism of hetero-seed crystal growthand provide a feasible route to mass production of 3C-SiC crystals,offering newopportunities to develop power electronic devices potentially with betterperformances than those based on 4H-SiC.

High quality and wafer-scale cubic silicon carbide single crystals