English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

Laser-driven coherent phonons can act as modulated strain fields and modifythe adiabatic ground state topology of quantum materials. Here we usetime-dependent first-principles and effective model calculations to simulatethe effect of the coherent phonon induced by strong terahertz electric field onelectronic carriers in the topological insulator ZrTe$_5$. We show that acoherent $A_\text{1g}$ Raman mode modulation can effectively pump carriersacross the band gap, even though the phonon energy is about an order ofmagnitude smaller than the equilibrium band gap. We reveal the microscopicmechanism of this effect which occurs via Landau-Zener-St\"uckelberg tunnelingof Bloch electrons in a narrow region in the Brillouin zone center where thetransient energy gap closes when the system switches from strong to weaktopological insulator. The quantum dynamics simulation results are in excellentagreement with recent pump-probe experiments in ZrTe$_5$ at low temperature.

Ab-initio Simulations of Coherent Phonon-Induced Pumping of Carriers in Zirconium Pentatelluride