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We present Nb thin films deposited in-situ on GaAs by combining molecularbeam epitaxy and magnetron sputtering within an ultra-high vacuum cluster. Nbfilms deposited at varying power, and a reference film from a commercialsystem, are compared. The results show clear variation between the in-situ andex-situ deposition which we relate to differences in magnetron sputteringconditions and chamber geometry. The Nb films have critical temperatures ofaround $9 \textrm{K}$. and critical perpendicular magnetic fields of up to$B_{c2} = 1.4 \textrm{T}$ at $4.2 \textrm{K}$. From STEM images of the GaAs-Nbinterface we find the formation of an amorphous interlayer between the GaAs andthe Nb for both the ex-situ and in-situ deposited material.

Development of Nb-GaAs based superconductor semiconductor hybrid platform by combining in-situ dc magnetron sputtering and molecular beam epitaxy