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Thin-film lithium niobate is a promising platform owing to its largeelectro-optic coefficients and low propagation loss. However, the largefootprints of devices limit their application in large-scale integrated opticalsystems. A crucial challenge is how to maintain the performance advantage giventhe design space restrictions in this situation. This article proposes anddemonstrates a high-efficiency lithium niobate electro-optic (EO) modulatorwith high-permittivity cladding to improve the electric field strength inwaveguides and its overlap with optical fields while maintaining low opticalloss and broad bandwidth. The proposed modulator exhibits considerableimprovement, featuring a low half-wave voltage-length product of 1.41 Vcm, alow excess loss of 0.5 dB, and a broad 3 dB EO bandwidth of more than 40 GHz.This modulation efficiency is the highest reported for a broadband lithiumniobate modulator so far. The design scheme of using high-permittivity claddingmay provide a promising solution for improving the integration of photonicdevices on the thin-film lithium niobate platform and these devices may serveas fundamental components in large-scale photonic integrated circuits in thefuture.

High-efficiency electro-optic modulator on thin-film lithium niobate with high-permittivity cladding