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Bilayer (BL) molybdenum disulfide (MoS$_2$) is one of the most importantelectronic structures not only in valleytronics but also in realizingtwistronic systems on the basis of the topological mosaics in Moir\'esuperlattices. In this work, BL MoS$_2$ on sapphire substrate with2$H$-stacking structure is fabricated. We apply the terahertz (THz) time-domainspectroscopy (TDS) for examining the basic optoelectronic properties of thiskind of BL MoS$_2$. The optical conductivity of BL MoS$_2$ is obtained intemperature regime from 80 to 280 K. Through fitting the experimental data withthe theoretical formula, the key sample parameters of BL MoS$_2$ can bedetermined, such as the electron density, the electronic relaxation time andthe electronic localization factor. The temperature dependence of theseparameters is examined and analyzed. We find that, similar to monolayer (ML)MoS$_2$, BL MoS$_2$ with 2$H$-stacking can respond strongly to THz radiationfield and show semiconductor-like optoelectronic features. The theoreticalcalculations using density functional theory (DFT) can help us to furtherunderstand why the THz optoelectronic properties of BL MoS$_2$ differ fromthose observed for ML MoS$_2$. The results obtained from this study indicatethat the THz TDS can be applied suitably to study the optoelectronic propertiesof BL MoS$_2$ based twistronic systems for novel applications as optical andoptoelectronic materials and devices.

Electronic properties of 2{\it H}-stacking bilayer MoS$_2$ measured by terahertz time-domain spectroscopy