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In this paper, we present the effects of high-energy Ni++ ion irradiation onthe structural and optical properties of GaN films. Three different irradiationdoses of 1013, 1014, and 1015 ions/cm2 were used while keeping the ion energyat 700keV. The irradiation induced structural and optical changes in GaN filmswere measured using X-ray diffraction (XRD) and UV-Vis spectroscopy. The XRDmeasurements on irradiated films discovered several extra peaks in the XRDspectrum compared with the as-grown GaN film indicating the formation of newphases or defects in the GaN film due to the ion irradiation. The intensity ofthese extra peaks increases with increasing ion dose, suggesting that thedensity of defects in the GaN film also increases with increasing ion dosage.The UV-Vis measurements revealed a decrease in the bandgap of the irradiatedGaN films from 3.40 eV for the pristine GaN film to 3.26 eV for the filmirradiated with highest dose of 1015 ions/cm2. The decrease in bandgap can beattributed to the creation of defects and/or the formation of new phases in theGaN film due to the ion irradiation.

Impact of 700keV Ni++ ion irradiation on structural and optical properties of GaN