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We report on the low-frequency electronic noise in(Al$_x$Ga$_{1-x}$)$_2$O$_3$ Schottky barrier diodes. The noise spectral densityreveals 1/f dependence, characteristic of the flicker noise, with superimposedLorentzian bulges at the intermediate current levels (f is the frequency). Thenormalized noise spectral density in such diodes was determined to be on theorder of 10$^{-12}$ cm$^2$/Hz (f=10 Hz) at 1 A/cm$^2$ current density. At theintermediate current regime, we observed the random telegraph signal noise,correlated with the appearance of Lorentzian bulges in the noise spectrum. Therandom telegraph signal noise was attributed to the defects near the Schottkybarrier. The defects can affect the local electric field and the potentialbarrier, and correspondingly, impact the electric current. The obtained resultshelp to understand noise in Schottky barrier diodes made of ultra-wide-band-gapsemiconductors and can be used for the material and device quality assessment.

Low-Frequency Electronic Noise in the Aluminum Gallium Oxide Schottky Barrier Diodes