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A broad TCAD simulation analysis of a monolithic common drain bidirectionalGaN HEMT was performed. We used gate-to-gate distances of 4 microns and 6microns for the devices optimized with two field plates. The breakdown voltageswere 675V and 915V respectively. Inclusion of field plates near both the gatesproduced electric field peaks at the opposite ends of the transistorsimultaneously. This resulted in better electric field management or higherblocking voltage per unit length. Consequently, the 675V monolithicbidirectional HEMT had an impressive 40% improvement in on-resistance than its650V typical series/parallel counterpart.

Comprehensive TCAD Simulation Study of High Voltage (>650V) Common Drain Bidirectional AlGaN/GaN HEMTs