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HfO2-based Ferroelectric field-effect transistor (FeFET) has become a centerof attraction for non-volatile memory applications because of their low power,fast switching speed, high scalability, and CMOS compatibility. In this work,we show an n-channel FeFET-based Multibit memory, termed MirrorBit, whicheffectively doubles the chip density via programming the gradient ferroelectricpolarizations in the gate using an appropriate biasing scheme. We haveexperimentally demonstrated MirrorBit on GlobalFoundries HfO2-based FeFETdevices fabricated at 28 nm bulk HKMG CMOS technology. Retention of MirrorBitstates has been shown up to $10^5$ s at different temperatures. Also, theendurance is found to be more than $10^3$ cycles. A TCAD simulation is alsopresented to explain the origin and working of MirrorBit states based on theFeFET model calibrated using the GlobalFoundries FeFET device. We have alsoproposed the array-level implementation and sensing methodology of theMirrorBit memory. Thus, we have converted 1-bit FeFET into 2-bit FeFET using aparticular programming scheme in existing FeFET, without needing any notablefabrication process alteration, to double the chip density for high-densitynon-volatile memory storage.

FeFET-based MirrorBit cell for High-density NVM storage