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Analog switching in ferroelectric devices promises neuromorphic computingwith highest energy efficiency, if limited device scalability can be overcome.To contribute to a solution, we report on the ferroelectric switchingcharacteristics of sub-5 nm thin Al$_{0.74}$Sc$_{0.26}$N films grown onPt/Ti/SiO2/Si and epitaxial Pt/GaN/sapphire templates by sputter-deposition. Inthis context, we focus on the following major achievements compared topreviously available wurtzite-type ferroelectrics: 1) Record low switchingvoltages down to 1 V are achieved, which is in a range that can be supplied bystandard on-chip voltage sources. 2) Compared to the previously investigateddeposition of thinnest Al$_{1-x}$Sc$_x$N films on epitaxial templates, asignificantly larger coercive field to breakdown field ratio is observed forAl$_{0.74}$Sc$_{0.26}$N films grown on silicon substrates, the technologicallymost relevant substrate-type. 3) The formation of true ferroelectric domains inwurtzite-type materials is for the first time demonstrated on the atomic scaleby scanning transmission electron microscopy investigations of a sub-5 nm thinpartially switched film. The direct observation of inversion domain boundarieswithin single nm-sized grains supports the theory of a gradual domain-wallmotion limited switching process in wurtzite-type ferroelectrics. Ultimately,this should enable the analog switching necessary for mimicking neuromorphicconcepts also in highly scaled devices.

In-Grain Ferroelectric Switching in Sub-5 nm Thin AlScN Films at 1 V